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The evolution of test methodologies for high-speed digital communications componentsLECHEMINANT, Greg D.Technical digest - IEEE Gallium Arsenide Integrated Circuit Symposium. 2002, pp 203-206, issn 1064-7775, isbn 0-7803-7447-9, 4 p.Conference Paper

High field magnetoresistance oscillations in NbSe₃AUDOUARD, A; RICHARD, J; DUBOIS, S et al.Synthetic metals. 1993, Vol 56, Num 2-3, pp 2629-2634, issn 0379-6779Conference Paper

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Magnetic depopulation of sub-bands in In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunctionsNEWSON, D. J; BERGGREN, K.-F; PEPPER, M et al.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 19, pp L403-L410, issn 0022-3719Article

Shubnikov-de Haas effect in thin epitaxial films of gray tinTU, L. W; WONG, G. K; SONG, S. N et al.Applied physics letters. 1989, Vol 55, Num 25, pp 2643-2645, issn 0003-6951, 3 p.Article

Power loss by two-dimensional holes in coherently strained Ge_0.2Si_0.8/Si heterostructures: evidence for weak screeningXIE, Y. H; PEOPLE, R; BEAN, J. C et al.Applied physics letters. 1986, Vol 49, Num 5, pp 283-285, issn 0003-6951Article

Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic fieldBRUMMELL, M. A; VUONG, T. H. H; NICHOLAS, R. J et al.Solid state communications. 1986, Vol 57, Num 6, pp 377-380, issn 0038-1098Article

Magnetotransport properties of p-type HgTe-CdTe superlatticesWOO, K. C; RAFOL, S; FAURIE, J. P et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 8, pp 5996-5999, issn 0163-1829, part 2Article

Anisotropy in the Shubnikov-de Haas effect in Hg_1-xMn_xSeSCHLEIJPEN, H. M. A; BLOM, F. A. P.Physica status solidi. B. Basic research. 1986, Vol 135, Num 2, pp 605-614, issn 0370-1972Article

Enhancement of Shubnikov-de Haas oscillations by carrier modulationSCHACHAM, S. E; HAUGLAND, E. J; ALTEROVITZ, S. A et al.Applied physics letters. 1992, Vol 61, Num 5, pp 551-553, issn 0003-6951Article

Nonadiabatic transport in finite systems. II: Magnetotransport in a quasi-one-dimensional channelWAGNER, M.Physical review. B, Condensed matter. 1992, Vol 45, Num 20, pp 11606-11611, issn 0163-1829Article

Magnetotransport studies of remote doped Si/Si_1-xGe_x heterostructures grown on relaxed SiGe buffer layersTÖBBEN, D; SCHÄFFLER, F; ZRENNER, A et al.Thin solid films. 1992, Vol 222, Num 1-2, pp 15-19, issn 0040-6090Conference Paper

Broadening of the S1 doping layer in planar-doped GaAs in the limit of high concentrationsRODRIGUES, R; GUIMARAES, P. S. S; SAMPAIO, J. F et al.Solid state communications. 1991, Vol 78, Num 9, pp 793-796, issn 0038-1098, 4 p.Article

The Shubnikov-de Haas effect in InP close to the metal-insulator transitionFINLAYSON, D. M.Journal of physics. Condensed matter (Print). 1991, Vol 3, Num 19, pp 3331-3334, issn 0953-8984, 4 p.Article

Observation of intersubband transitions to motionally bound statesZHANG, Y; ZHANG, A; SLINKMAN, J et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 19, pp 10749-10751, issn 0163-1829Article

Phase of the oscillations of magnetotransport coefficients of degenerative two-dimensional electronsKADUSHKIN, V. I; KUL'BACHINSKII, V. A; TYBULEWICZ, A et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 4, pp 370-373, issn 0038-5700Article

On galvanomagnetic effects in layered conductorsPESCHANSKY, V. G; ROLDAN LOPEZ, J. A; GNADO YAO, T et al.Journal de physique 1, General physics, statistical physics, condensed matter, cross-disciplinary physics. 1991, Vol 1, Num 10, pp 1469-1479Article

Transport properties and persistent photoconductivity in InP/In_0.53Ga_0.47As modulation-doped heterojunctionsKANE, M. J; ANDERSON, D. A; TAYLOR, L. L et al.Journal of applied physics. 1986, Vol 60, Num 2, pp 657-664, issn 0021-8979Article

Electronic subbands of a δ doping layer in GaAs in a parallel magnetic fieldZRENNER, A; REISINGER, H; KOCH, F et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 8, pp 5607-5610, issn 0163-1829Article

Quantum Hall effect in In_0.53Ga_0.47As-InP heterojunctions with two populated electric subbandsGULDNER, Y; VIEREN, J. P; VOOS, M et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 6, pp 3990-3993, issn 0163-1829Article

Density-of-states effects in lateral-surface superlatticesSMOLINER, J; ROSSKOPF, V; BERTHOLD, G et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 4, pp 1915-1918, issn 0163-1829Article

Influence of ohmic contacts on the amplitude of Shubnikov-de Haas oscillationsKLITZING, K; NIEDER, J; HAUG, R. J et al.Semiconductor science and technology. 1992, Vol 7, Num 1, pp 82-85, issn 0268-1242Article

Influence of Tm on the properties of lead tellurideAKIMOV, B. A; KOROBEINKILOVA, E. N; RYABOVA, L. I et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 2, pp 208-209, issn 0038-5700Article

Universal conduction-band structure in some common semiconductor compoundsJOHNSON, E. A; MACKINNON, A; O'REILLY, E. P et al.Physical review letters. 1990, Vol 65, Num 6, pp 752-755, issn 0031-9007, 4 p.Article